SiGe for MOS Technologies Phase 2:

Development and Applications

EPSRC: GR/N65677/01

Refereed Journal Publications and Conference Publications

for the period: February 2001-October 2004

 

Prepared by:

 Professor John Barker

Department of Electronics and Electrical Engineering

University of Glasgow

 

 

_______________________________________________

Home Page:    J R Barker home page

E-mail: jbarker@elec.gla.ac.uk

April03 large power point presentation

November04 large power point presentation


Refereed Journal Publications (43) 2001-2004

 

 

 

1. J.R. Watling, Y.P.Zhao, A.Asenov and J.R. Barker,

Non-equilibrium hole transport in deep sub-micron well-tempered Si pMOSFETs

VLSI Design 13, 169-173 (2001)

 

2. J.R. Barker, R.C. W. Wilkins and J. Watling

A Fast Algorithm for the Study of Wave-packet Scattering at Disordered Interfaces

VLSI Design, 13  199-204 (2001)

 

3. M. J. Palmer, G. Braithwaite, T. J. Phillips, M. J. Prest, E. H. C. Parker, T. E. Whall, C. P. Parry, A. M. Waite, A. G. R. Evans, S. Roy, J. R. Watling and A. Asenov, Effective mobilities in pseudomorphic Si/SiGe/Si p-channel metal-oxide semiconductor field-effect transistors with thin silicon capping layersˆ, Applied Physics Letters, Vol. 78, No. 1424-1426, 2001.

 

4. J. R.Barker,

A simple model for the quantum hydrodynamic simulation of electron transport in quantum confined structures in the presence of vortices

VLSI Design, 13 237-244 (2001)

 

5. J. Watling, J.R. Barker and A. Asenov

Soft Sphere Model for Electron Correlation and Scattering in the Atomistic Modelling of Semiconductor Devices

VLSI Design, 13, 441-446 (2001)

 

6. J. R. Barker and J. Watling,

Simulation of Enhanced Interface Trapping Due to Carrier Dynamics in Warped Valence Bands in SiGe Devices

VLSI Design, 13, 453-458 (2001)

 

7. U. N. Straube, A. G. R. Evans, G. Braithwaite, S. Kaya, J. R. Watling and A. Asenov,On the Mobility Extraction for H-MOSFETsˆ, Solid-State Electronics, Vol. 45, pp.527-529, 2001.

 

8.J.R. Barker,

On the completeness of quantum hydrodynamics: vortex formation and the need for both vector and scalar quantum potentials in device simulation

 Journal of Computational Electronics, 1, 17-21 (2002)

 

9.J.R. Barker, On the current and density representation of many-body quantum

transport theory

Journal of Computational Electronics, 1, 23-26 (2002)

 

10. J. Watling, and J. R. Barker

Quantum potential corrections for spatially dependent effective masses with application to charge confinement at heterostructure interfaces

Journal of Computational Electronics, 1, 279-282 (2002)

 

11. J. R. Barker

Normal vortex states and their application in mesoscopic semiconductor devices

Microelectronic Engineering, 63 223-231 (2002)

 

12. J. R. Barker and J. Watling

Traversal-times and charge confinement for spatially dependent effective masses within semiconductor heterostructures: the quantum potential approach

Microelectronic Engineering, 63,  97-103 (2002)

 

13. J. R. Watling, J. R. Barker and S. Roy,

 ˆQuantum potential corrections for spatially dependent effective masses with application to charge confinement at heterostructure interfacesˆ,

Electronics Letters, Vol. 1, No. 1-2, pp.2790282, July 2002.

 

14. A. R. Brown, A. Asenov and J. R. Watling, ˆIntrinsic Fluctuations in Sub 10 nm Double-Gate MOSFETs Introduced by Discreteness of Charge and Matterˆ,

IEEE Trans. Nanotechnology, Vol. 1, pp.195-200, 2002.

 

15. S. Kaya, A. Asenov and S. Roy, ˆBreakdown of universal mobility curves in sub-100nm MOSFETsˆ,
IEEE Trans. Nanotechnology, Vol. 1, pp.260-264, 2002.

 

16. M.J. Prest, M.J.Palmer, T.J.Grasby, P.J.Phillips, O.A. Mironov, E.H.C. Parker, T.E.Whall, A.M. Waite, A.G.R. Evans, J.R. Watling, A.Asenov, J.R. Barker

Transconductance, carrier mobility and 1/f noise in Si/Si0.64Ge0.36/Si pMOSFETs

Materials Science and Engineering B, Solid State Materials for Advanced Technology, B89, 444-448 (2002).

 

17 .J. R. Barker

Bohm trajectories in quantum transport

"Progress in Nonequilibrium Green's Functions II",

M. Bonitz and D. Semkat (eds.), World Scientific Publ., Singapore, 198-213 (2003)

 

18..J.R. Barker

A theoretical study of atomistic effects on the quantum hydrodynamics of carriers in decanano semiconductor devices using non-self-averaged Green functions

Physica E19, 62-70 (2003)

 

19. J.R. Barker

Green function simulation study of non self-averaging scattering processes in atomistic semiconductor devices

J.Computational Electronics 2, 153-161 (2003).

 

 20. J. R. Watling, L. Yang, M. Borici, J. R. Barker and A. Asenov

Degeneracy and high doping effects in deep sub-micron relaxed and strained silicon n-MOSFETs

J.Computational Electronics 2, 475-479 (2003).

 

21. L. Yang, J. R. Watling, M. Borici, R.C.W. Wilkins, A. Asenov, J. R. Barker and S. Roy Simulations of scaled sub-100 nm strained Si/SiGe p-channel MOSFETs.

J.Computational Electronics, 2, 363-368 (2003).

 

22. A. Asenov, A. R. Brown and J. R. Watling, ˆQuantum Corrections in the simulation of decanano MOSFETsˆ,

Solid-State Electronics, Vol. 47, 1141-1145, 2003.

 

23. A. Asenov, J. R. Watling, A. R. Brown and D. K. Ferry,

ˆThe Use of Quantum Potentials for Confinement and Tunnelling in Semiconductor Devicesˆ,

J. Comp. Elec., Vol. 1, pp.503-513, 2003

 

24.A. Asenov, S. Kaya and A. R. Brown, ˆIntrinsic Parameter Fluctuations in Decananometre MOSFET's Introduced by Gate Line Edge Roughnessˆ,

IEEE Trans. Electron Dev., Vol. 50, pp.1254-1260, 2003.

 

25. A. Asenov, A. R. Brown, J. H. Davies, S. Kaya and G. Slavcheva, ˆSimulation of Intrinsic Parameter Fluctuations in Decananometre and Nanometre scale MOSFET's,

IEEE Trans. Electron Dev., Vol. 50, pp.1837-1852, 2003.

 

26. M. Borici, J.R. Watling, R. Wilkins, L. Yang, J.R. Barker

 A Non Perturbative Model of Surface Roughness Scattering for Monte Carlo Simulation of Relaxed Silicon n-MOSFETs

Journal of Computational Electronics 2, 163-167 (2003).

 

27. W. Ma, S. Kaya and A. Asenov,ˆStudy of RF linearity in sub-50 nm MOSFETs using simulationsˆ,
 J. Comp. Elec., Vol. 2, pp.347-352, 2003.

 

28. A. Asenov, A. R. Brown and J. R. Watling, ˆQuantum Corrections in the simulation of decanano MOSFETsˆ,
Solid-State Electronics, Vol. 47, pp.1141-1145, 2003.

 

29.J. R. Barker,

Non-equilibrium quantum transport in finite device structures in the presence of non-self-averaged  atomistic impurity scattering

Semiconductor Science and Technology, 19S, p56-59, 2004.

30. M. Borici, J. R. Watling, R. C. W. Wilkins, L. Yang, J. R. Barker and A. Asenov, Interface roughness scattering and its impact on electrons transport in relaxed and strained Si n-MOSFETs,

Semiconductor Science and Technology, 19S, p155-157, 2004.

 

31. Impact of device geometry and doping strategy on linearity and RF performance in Si/SiGe MODFETs

L. Yang, A. Asenov, J. R. Watling, M. Borici, J. R. Barker, A. Asenov, S. Roy, K .Elgaid, I. Thayne and T. Hackbarth. ,

Microelectronics Reliability 44, 1101-1107, 2004.

 

32. K. Kalna, M. Borii, L. Yang and A. Asenov,

Monte Carlo simulations of III-V MOSFETsˆì,

Semiconductor Science and Technology, Vol. 19, pp.S202-S205, 2004.

 

33.  Barker, J.R.,

Non-equilibrium quantum transport in finite device structures in the presence of non-self-averaged  atomistic impurity scatteringˆï,

Semiconductor Science and Technology, 19S 56-59, 2004.

 

34.  Barker, J.R.,

Quantum fluctuations in atomistic semiconductor devicesˆï

Superlattices and Microstructures 34, 361-366, 2004

 

35. Borici, M., Watling, J.R., Wilkins, R.C.W., Yang, L., Barker, J.R And Asenov, A. ˆîInterface roughness scattering and its impact on electrons transport in relaxed and strained Si n-MOSFETs,ˆï

Semiconductor Science and Technology, 19S,  155-157, 2004

 

36. Watling,J.R., Yang, L., Borici, M., Wilkins, R.C.W., Asenov, A., Barker, J.R And Roy,S, ˆîThe impact of interface roughness scattering and degeneracy in relaxed and strained Si n-channel MOSFETsˆï

Solid State Electronics, 48, 1337-1346, 2004 (invited review paper).

 

37.Yang, L., Watling, J.R., Wilkins,R.C.W.,  Borici, M., Barker, J.R., Asenov, A And Roy, S.

Si/SiGe Heterostructure Parameters for Device Simulations,

Semiconductor Science and Technology, 19, 1174-1182, 2004.

 

38. Yang, L., Watling, J.R., Adama-Lema, F., Asenov, A, And Barker, J. ˆîSimulations of sub-100 nm strained Si MOSFETs with high k gate stacksˆï

Int. Journal Computational Electronics, accepted for publication (2004).

 

39. Barker, J.R And Martinez, A., ˆîVortex flows in semiconductor device quantum channels: time-dependent simulationˆï

 Int. Journal Computational Electronics, accepted for publication (2004).

 

40. L. Yang, J. R. Watling, M. Borii, J. R. Barker and A. Asenov,
Simulations of scaled sub-100nm strained Si/SiGe p-channel MOSFETsˆì,
J. Comp. Elec., 2 363-368, 2004.

 

41. C. Alexander, J.R. Watling and A. Asenov,
Artificial carrier heating due to the introduction of ab-initio Coulomb scattering in Monte Carlo simulations.
Superlattices and Microstructures, Vol. 34/3-6 pp 319-326 (2004)

 

42. C. Alexander, J.R. Watling, A. Asenov, Small volume mobility variations due to Ionised impurity scattering,
Semiconductor Science and Technology, Vol. 10S, pp. 139-141 (2004)

 

43. J. R. Watling, L. Yang, A. Asenov, J. R. Barker,
Impact of high-k dielectric HfO2 on the mobility and device performance of

Sub-100nm n-MOSFETs

IEEE Transactions on Device and Materials Reliability , accepted for publication (2004).

 

44. L. Yang, J. R. Watling, R. C. W. Wilkins, M. Borii, J.R. Barker, A. Asenov, 'Interface Roughness Scattering in Sub-100nm Si and Strained Si n-MOSFETs',

IEEE Transactions on Devices , submitted for publication (2004).

 

 

 

 

Refereed Conference Publications (59)  2001-2004

 

1. L. Yang, J. R. Watling, F. Adamu-Lema, A. Asenov and J. R. Barker, ˆíScaling study of Si and strained Si n-MOSFETs with different high-k gate stacksˆì, 2004 International Electron Device Meeting (IEDM), San Francisco, December 2004.

 

2. Watling,J.R., Yang, L., Asenov, A., Barker, J.R  And Roy,S, ˆîImpact of high-k dielectric HfO2 on the mobility and device performance of sub-100nm n-MOSFETsˆï, International Workshop on Electrical Characterization and Reliability of High-k devicesˆï, International SEMATECH, Austin Texas (2004), November 2004.

3. Yang, L., Watling, J.R., Adama-Lema, F., Asenov, A, And Barker, J. ˆîSimulations of sub-100 nm strained Si MOSFETs with high k gate stacksˆï

IEEE extended abstracts, International Workshop on Computational Electronics IWCE-10, West Lafayette, 2004.

4. Barker, J.R And Martinez, A., ˆîVortex flows in semiconductor device quantum channels: time-dependent simulationˆï, IEEE extended abstracts, International Workshop on Computational Electronics, IWCE-10, West Lafayette, November 2004.

5. C. Riddet, A. Brown, C. Alexander, J.R. Watling, S. Roy and A. Asenov, Scattering from body thickness fluctuations in double gate MOSFETs. An ab initio Monte Carlo simulation study, , IEEE IWCE 10, Book of Abstracts, pp 194-195 (2004) West Lafayette, November 2004

6. L. Yang, J. R. Watling, A. Asenov, J. R. Barker and S. Roy, ˆíSub-100nm strained Si CMOS: Device performance and circuit behaviorˆì, 7th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT), Beijing, October 2004.

7. L. Yang, J. R. Watling, A. Asenov, J. R. Barker and S. Roy, ˆíDevice performance in conventional and strained Si MOSFETs with high-k gate stackˆì, IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 199-202, Munich, September 2004.

8. Yang, L., Watling, J. R.,Barker, J.R., And Asenov, A.  ˆîThe impact of soft-optical phonon scattering due to high-¬Éˆà dielectrics on the performance of sub-100nm conventional and strained Si n-MOSFETsˆï,

Proc 27th International Conference on Physics of Semiconductors (ICPS04), Arizona, August 2004

9. Barker, J.R.  ˆîQuantised Vortex Flows And Conductance Fluctuations In High Temperature Atomistic Silicon MOSFET Devicesˆï

Proc 27th International Conference on Physics of Semiconductors (ICPS04), Arizona, 2004., August 2004.

10. L. Yang, J. R. Watling, J. R. Barker and A. Asenov, ˆíThe impact of soft-optical phonon scattering due to high-k dielectrics on the performance of sub-100nm conventional and strained Si n-MOSFETsˆì, 27th International Conference on Physics of Semiconductors (ICPS04), July 2004.

11. L. Yang, J. R. Watling, R. C. W. Wilkins, J. R. Barker and A. Asenov, ˆíReduced interface roughness in sub-100nm strained Si n-MOSFETs - A Monte Carlo simulation studyˆì, Proceedings of the 5th Europe Workshop on Ultimate Integration of Silicon (ULIS04), pp.23-26, IMEC Belgium April 2004.

12. K. Kalna, L. Yang, J. R. Watling and A. Asenov, ˆí80 nm InGaAs MOSFET compared to equivalent Si transistor, Proceedings of ULIS 2004ˆì, ULIS 2004 Proceedings, pp.159-162, 2004. IMEC Belgium 2004.

 

13. Watling, J.R.,Yang, L., Barker, J.R., And Asenov. A, The Impact of high-k dielectrics on the future performance of nano-scale MOSFETs

IoP Condensed Matter and Materials Physics Conference (CMMP04), Warwick, SIL. 1.4, 98 , April 2004.

14. Barker, J.R., ˆîQuantum fluctuations in atomistic silicon and silicon-germanium

semiconductor MOSFET devicesˆï,

IoP Condensed Matter and Materials Physics Conference (CMMP04), Warwick, SIL.1.3, 2004, pp. 98. April 2004.

15. Yang, L., Watling,J.R., Wilkins,R.C.W., Barker, J.R And A. Asenov. ˆîMonte Carlo investigation of interface roughness scattering in relaxed and strained Si n-MOSFETsˆï,

IoP Condensed Matter and Materials Physics Conference (CMMP04), Warwick, SIL.P2.5, 100 , April 2004.

16. L. Yang, A. Asenov, M. Borici, J. R. Watling, J. R. Barker, A. Asenov, S. Roy, K .Elgaid, I. Thayne and T. Hackbarth.

Optimizations of sub-100nm Si/SiGe MODFETs for high linearity RF applications,

Proceedings of the 2003 IEEE Conference on Electron Device and Solid-State Circuits (EDSSC03), p331-334, Hong Kong, December 2003.

17. L. Yang, A. Asenov, J. R. Watling, M. Borici, J. R. Barker, A. Asenov, S. Roy, K .Elgaid, I. Thayne and T. Hackbarth.

A simulation study of high linearity Si/SiGe HFETs,

Proceedings of the 14th Workshop on Modelling and Simulation of Electron Device (MSED03), p41-44, Barcelona, 2003.

18. J. R. Watling, L. Yang, M. Bori¬çi, J. R. Barker and A. Asenov, ˆíDegeneracy and high doping effects in deep sub-micron relaxed and strained SiGe MOSFETsˆì, nternational Workshop on Computational Electronics 9 (IWCE-9) Rome, 2003 .

19. S. Roy, B. Cheng, G. Roy and A. Asenov, ˆíA methodology for introducing ˆîatomisticˆï parameter fluctuations into compact device models for circuit simulationˆì, International Workshop on Computational Electronics IWCE-9, Frascati, May 2003.

20. S. Roy, A. Lee, A. R. Brown and A. Asenov, ˆíApplication of quasi-3D and 3D MOSFET simulations in the atomistic regimeˆì, Extended abstracts of the International Workshop on Computational Electronics IWCE-9, Frascati May 2003.

21. L. Yang, J. R. Watling, M. Bori¬çi, R. C. W. Wilkins, A. Asenov, J. R. Barker and S. Roy, ˆíSimulations of scaled sub-100nm strained Si/SiGe p-channel MOSFETsˆì, 9th IEEE International Workshop of Computational Electronics (IWCE), Frascati, May 2003.

22. W. Ma, S. Kaya and A. Asenov, ˆíStudy of RF linearity in sub-50 nm MOSFETs using simulationsˆì, International Workshop on Computational Electronics IWCE-9, Frascati May, 2003.

23. J. R. Barker

Green function simulation study of non self-averaging scattering processes in atomistic semiconductor devices

International Workshop on Computational Electronics IWCE-9, Frascati May, 2003.

24. J. R. Watling, L. Yang, M. Borici, J. R. Barker and A. Asenov

Degeneracy and high doping effects in deep sub-micron relaxed and strained silicon n-MOSFETs

International Workshop on Computational Electronics IWCE-9, Frascati May, 2003.

25. L. Yang, J. R. Watling, M. Borici, R.C.W. Wilkins, A. Asenov, J. R. Barker and S. Roy

Simulations of scaled sub-100 nm strained Si/SiGe p-channel MOSFETs.

International Workshop on Computational Electronics IWCE-9, Frascati May, 2003.

26. M. Borici, J.R. Watling, R. Wilkins, L. Yang, J.R. Barker

A Non Perturbative Model of Surface Roughness Scattering for Monte Carlo Simulation of Relaxed Silicon n-MOSFETs

International Workshop on Computational Electronics IWCE-9, Frascati May, 2003

27. A. R. Brown, F. Adamu-Lema and A. Asenov, ˆíIntrinsic Parameter Fluctuations in UTB MOSFETs Induced by Body Thickness Variationsˆì, Silicon Nanoelectronics Workshop, Kyoto, Japan, 8-9 June 2003. 

28. J. R. Barker,

Non-equilibrium quantum transport in finite device structures in the presence of non-self-averaged  atomistic impurity scattering

Hot Carriers in Semiconductors 13 HCIS 13, Modena, August 2003.

29. M. Bori¬çi, J. R. Watling, R. C. W. Wilkins, J. R. Barker and A. Asenov, ˆíInterface roughness scattering and its impact on electrons transport in in relaxed and strained Si n-MOSFETsˆì, Hot Carriers in Semiconductors 13 HCIS 13, Modena, August 2003.

30. C. Alexander, J. R. Watling and A. Asenov, ˆíSmall volume mobility variations due to Ionised impurity scatteringˆì, Hot Carriers in Semiconductors 13 HCIS 13, Modena, August 2003.

31. A. J. Garcia Loureiro, K. Kalna, A. Asenov, R. C. W. Wilkins and J. M. Lopez-Gonzales, ˆíStatistical 3D Simulations of Intrinsic Fluctuations in Nanoscaled PHEMTsˆì, Proceedings of the 14th Workshop on Modelling and Simulation of Electron Device (MSED03), pp.45-48, 2003.

32. C. Alexander, J. R. Watling and A. Asenov, ˆíArtificial carrier heating due to the introduction of ab-initio Coulomb scattering in Monte Carlo simulationsˆì, NPMS-6/SIMD-Maui, Dec 2003.

33. S. Kaya, W. Ma and A. Asenov, ˆíDesign of DG-MOSFET's for High Linearity Performanceˆì, Proc. SOI 2003, 2003.

34. W. Ma, S. Kaya and A. Asenov, ˆíScaling of RF Linearity in DG and SOI MOSFETsˆì, EDMO 2003,

35. Asenov, A. R. Brown and J. R. Watling, ˆíModelling end-of-the-Roadmap transistorsˆì, ULSI Process Integration, 2003.

36. J. R. Barker,

Quantum fluctuations in atomistic semiconductor devices

4th Int Conference on Surfaces and Interfaces of Mesoscopic Systems (SIMD-4) joint with 6th Int Conference on New Phenomena in Mescoscopic structures (NPMS-6), Maui, December 2003.

36. J. R. Barker,

A theoretical study of atomistic effects on the quantum hydrodynamics of carriers in decanano semiconductor devices using non-self-averaged Green functions

4th International Symposium on Nanostructures and mesoscopic systems, Tempe, February 2003

37. J. R. Barker, E. Parker, T. Whall, K. Fobelets, M. Kearney

The UK Silicon Germanium programme HMOS II

10th Advanced Heterostructures Workshop, Hawaii, December 2002. INVITED.

38. J.R. Barker, L. Yang, J Watling, R. Wilkins, A. Asenov, S. Roy, T. Hackbarth

Scaling study of Si/siGe MODFETs for RF applications

10th Advanced Heterostructures Workshop, Hawaii, December 2002. INVITED.

39. A. R. Brown, A. Asenov and J. R. Watling, ˆíIntrinsic Fluctuations in Sub 10 nm Double-Gate MOSFETs Introduced by Discreteness of Charge and Matterˆì,

Silicon Nanoelectronics Workshop, Honolulu, HI, 9-10 June 2002. 

40. L. Yang, J. R. Watling, R. C. W. Wilkins, A. Asenov, J. R. Barker, S. Roy and T. Hackbarth, ˆíScaling study of Si/SiGe MODFETs for RF applicationsˆì,  10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO02), Manchester, 2002.

41. K. Kalna, L. Yang and A. Asenov, ˆíHigh performance III-V MOSFETs: a dream close to reality?ˆì, IEEE Symposium on Electron Devices for Microwave and Optoelectronic Applications,  EDMO 2002, Manchester, 2002.

42. S. Kaya, A. Asenov and S. Roy, ˆíBreakdown of universal mobility curves in sub-100 nm MOSFETsˆì, Silicon Nanoelectronics Workshop, 2002.

43. A. Asenov, A. R. Brown and J. R. Watling, ˆíQuantum Corrections in the Simulation of Decanano MOSFETsˆì, 3rd European Workshop on ULtimate Integration of Silicon (ULIS 2002), 2002.

44. A. Asenov, A. R. Brown and J. R. Watling, ˆíThe Use of Quantum Potentials for Confinement in Semiconductor Devicesˆì, Modeling and Simulation of Microstructures (MSM 2002), 2002.

45. J.R. Barker,

Quantum hydrodynamics of normal vortices in open semiconductor quantum dots

26th International Conference on the Physics of Semiconductors, Edinburgh, 2002,

46. J. Watling, and J. R. Barker ,

Quantum potential corrections for spatially dependent effective masses with application to charge confinement at heterostructure interfaces

New Phenomena in Mesoscopic systems 5, Maui, November 2001.

 

47.J.R. Barker,

Normal vortex states and their application in mesoscopic semiconductor devices

New Phenomena in Mesoscopic systems 5, MauiNovember 2001.INVITED

48. A. R. Brown, S. Kaya, A. Asenov, J. H. Davies and T. Linton, ˆíStatistical Simulation of Line Edge Roughness in Decanano MOSFETsˆì, Silicon Nanoelectronics Workshop, Kyoto, Japan, 10-11 June 2001. 

 

49. S. Kaya, A. R. Brown, A. Asenov, D. Magot and T. Linton, ˆíAnalysis of Statistical Fluctuations Due to Line Edge Roughness in Sub-0.1¬µm MOSFETsˆì, Simulation of Semiconductor Processes and Devices (SISPAD 2001), pp.78-81, 2001.
 

50. J. R. Watling, A. R. Brown, A. Asenov and D. K. Ferry, ˆíQuantum Corrections in 3-D Drift Diffusion Simulation of Decanano MOSFETs Using an Effective Potentialˆì, Simulation of Semiconductor Processes and Devices (SISPAD 2001),

51. M. Palmer, G. Braithwaite, M. J. Prest, E. H. C. Parker, T. E. Whall, Y. P. Zhao, S. Kaya, J. R. Watling, A. Asenov, J. R. Barker, A. M. Waite and A. G. R. Evans, ˆíEnhanced Velocity Overshoot and Transconductance in Si/SiGe/Si pMOSFETs - Prediction for Deep Submicron Devicesˆì,

ESSDERC, 2001.

52. S. Kaya, A. Asenov and S. Roy, ˆíBreakdown of universal mobility curves in sub-100nm MOSFETsˆì, International Workshop on Computational Electronics IWCE01, Champagne-Urbana, 2001.

53. A. R. Brown, J. R. Watling and A. Asenov, ˆíA 3-D Atomistic Study of Archetypal Double Gate MOSFET Structuresˆì, International Workshop on Computational Electronics IWCE01 Champagne-Urbana, 2001.

54. J. R. Barker,

On the completeness of quantum hydrodynamics: vortex formation and the need for both vector and scalar quantum potentials in device simulation

International Workshop on Computational Electronics

 IWCE01 Champagne-Urbana, 2001.

55. J.R. Barker, On the current and density representation of many-body quantum

transport theory

 International Workshop on Computational Electronics IWCE01 Champagne-Urbana, 2001.

56. J. R. Watling, J. R. Barker and S. Roy,

Quantum Potential Corrections for Spatially Dependent Effective Masses with Application to Charge Confinement at Heterostructure Interfaces

International Workshop on Computational Electronics IWCE01 Champagne-Urbana, 2001.

 

57. J.R. Barker, Bohm Trajectories in Quantum Transport, INVITED

2nd Int.Conf Progress in Non.Equilibrium Green Function Theory, Dresden 2002.

 

58. J.R. Barker, Trajectories in quantum transport, Advanced Research Workshop on Quantum Transport, Maratea, Italy, INVITED

 

59. J.R. Barker, Semiconductor Phenomena, Symposium on Semiconductor Physics and Devices, Osaka, Japan (2001) INVITED.