Quantum transport study on the impact of Channel Length and Cross-section on Variability induced by Random Discrete Dopants in narrow gate-all-around Silicon Nanowire Transistors,
A. MARTINEZ, N. SEOANE, M. ALDEGUNDE, A. R. BROWN, J. R. BARKER and A. ASENOV
IEEE Transactions on Electron Devices, accepted for publication (2011)
Conceptual issues, practicalities and applications of Bohmian and other quantum trajectories in nanoelectronics
J. R. BARKER,
Proceedings of CCP6 Molecular Quantum Dynamics, Workshop on Quantum Trajectories (Bangor), (2011).
A new approach to modelling quantum distributions and quantum trajectories for density matrix and Green Function simulation of nano-devices
J. R. BARKER
J.Computational Electronics, Vol. 9, 243-251 (2010)
Variability in Si Nanowire MOSFETs Due to the Combined Effect of Interface Roughness and Random Dopants: A Fully 3D NEGF Simulation Study,
A. MARTINEZ, N. SEONE, A. R. BROWN, J. R. BARKER and A. ASENOV,
IEEE Transactions on Electron Devices, Vol. 57, 1626-1635 (2010)
Quantum phase space distributions with compact support
J.R. BARKER
Physica E 42, 491-496 (2010).
Dopants and Roughness induced Resonances in thin Si Nanowire transistors: A self-consistent NEGF-Poisson study
A. MARTINEZ, N. SEOANE, A. BROWN, J. BARKER, and A. ASENOV
Progress in Nonequilibrium Green's Functions IV, Journal of Physics: Conference Series Vol. 220, 012009 (2010)
3-D Non-Equilibrium Green's Function Simulation of Non-Perturbative Scattering from Discrete Dopants in the Source and Drain of a Silicon Nanowire Transistor,
A. MARTINEZ, N. SEONE, A. R. BROWN, J. R. BARKER and A. ASENOV
IEEE Transactions on Nanotechnology, vol. 8, no. 5, 603-610 (2009)
Current variability in Si nanowire MOSFETS due to random dopants in the source/drain regions: a fully 3-D NEGF Simulation study
N. SEOANE, A. MARTINEZ, A.R. BROWN, J.R. BARKER, A. ASENOV
IEEE Transactions on Electron Devices,vol. 56, No.7, pp. 1388-1395 (2009).
Impact of Body Thickness Dependent Bandstructure on Scaling of Double Gate MOSFETs: a DFT/NEGF study
A. MARTINEZ, K.KALNA, P.V.SUSHKO, A.L. SCHLUGER, J.R. BARKER and A. ASENOV
IEEE Transactions on Nanotechnology, vol. 8, 159-166 (2009).
A full 3D non-equilibrium Green functions study of a stray charge in a nanowire MOS transistor,
A. MARTINEZ, M. BESCOND, A. R. BROWN, J. R. BARKER and A. ASENOV,
Journal of Computational Electronics, Vol.7, No.3, pp.359-362 (2008)
Impact of High-K Gate Stacks on Transport and Variability in Nano-CMOS Devices,
J. R. WATLING, A. R. BROWN, G. FERRARI, J. R. BARKER, G. BERSUKER, P. ZEITSOFF and A. ASENOV,
J. Computational and Theoretical Nanoscience, Vol.5, pp.1072-1088 (2008)
The influence of polarisation and image charges on electron- impurity scattering in high degeneracy, nanometre scale silicon wrap-round gate MOSFETs
J R BARKER, E TOWIE and J R WATLING
Journal of Physics: Conference Series 109 012009 (2008)
Performance variability in wrap-round gate silicon nano-transistors: a 3D self-consistent NEGF study of ballistic flows for atomistically-resolved source and drain
A MARTINEZ, J R BARKER, M BESCOND, A R BROWN and A ASENOV
Journal of Physics: Conference Series 109 012026 (2008)
NEGF simulations of the effect of strain on scaled double gate nanoMOSFETs
K.KALNA , A. MARTINEZ, A. SVIZHENKO, M. P. AANATRAM, J. R. BARKER and A. ASENOV
J.Computational Electronics, 7 (3) 288-292 (2008)
Impact of Strain on Scaling of DG nanoMOSFETs using the NEGF Approach,
A. MARTINEZ, K. KALNA, J. R. BARKER, A. ASENOV,
Physica Status Sol.C-Current topics in Solid State Physics vol 5, No. 1 47-51 (2008).
Quantum transport in mesoscopic semiconductor devices: vortices, flows and atomistic effects
J.R. BARKER
AIP Conference Proceedings vol 995, Nuclei and Mesoscopic Physics, 104-115 (2008)
2D/3D NEGF modeling of the impact of random dopants /dopant aggregation in silicon nano-transistors,
J.R. BARKER
2008 International Conference on Simulation of Semiconductor Processes and Devices, Hakkone, Japan, 5-11 September, 2008 Proc. SISPAD 2008, IEEE Cat. No. CFP08SSD-PRT, 337-340, (2008)
Ab initio coherent scattering from discrete dopants in the source and drain of a nanowire transistor using 3D NEGF simulations
N. SEOANE, A. MARTINEZ, A. R. BROWN, J. R. BARKER AND A. ASENOV.
Proc. IEEE 2008 Silicon Nanoelectronics Workshop, Honolulu, Hawaii, Honolulu, June 2008.
Simulation of impurities with an attractive potential in fully 3-D real-space Non-Equilibrium Green’s Function simulations
A. MARTINEZ, N. SEOANE, A. R. BROWN, J. R. BARKER and A. ASENOV
Proc. 2008 International Conference on Simulation of Semiconductor Processes and Devices, Hakkone, Japan, 5-11 September, 2008,Proc. SISPAD 2008, IEEE Cat. No. CFP08SSD-PRT, 341-344, (2008)
Self-Organizing smart dust sensors for planetary exploration,
J R BARKER
Workshop on Swarm intelligence part of Nanonets 2008 Conference Boston, Ma, USA, 14-16 September, (2008).
The 3D simulation of nanotransistors with non-equilibrium Greens Functions: effects of charge quantization and rough interfacial landscapes
J R BARKER
European Materials Research Society Conference, Strasbourg, 26-30 May, (2008). Quantum phase space distributions for non-equilibrium transport J R BARKER Proceedings of Conference on Frontiers of Quantum Thermodynamics and Mesoscopic systems , Prague, 28-July-2nd August, (2008)
A self-consistent full 3-D real space NEGF simulator for studying nonperturbative effects in nano-Mosfets
A. MARTINEZ, M. BESCOND, J.R. BARKER, A. SVIZHENKO, M. P. ANATRAM,C. Millar and A. ASENOV
IEEE Transactions Electron Devices,54, 2213-2222 (2007)
Beyond SiO2 technology: The impact of high-k dielectrics
G. FERRARI, J. R. WATLING, S. ROY, J. R. BARKER AND A. ASENOV
Journal of Non-Crystalline Solids, vol. 353,630-634 (2007).
The impact of random dopant aggregation in source and drain on the performance of ballistic DG nano-MOSFETs : a NEGF study.
A. MARTINEZ, J. R. BARKER, A. SVIZHENKO, M. P. ANANTRAM, and A. ASENOV
IEEE Transactions on Nanotechnology:6, 438-445 (2007)
Impact of Body Thickness Dependent Bandstructure on Scaling of Double Gate MOSFETs:
a DFT/NEGF study
A. Martinez, K. Kalna, P. V. Sushko, A. L. Shluger, J. R. Barker and A. Asenov
in Proceedings of 2007 Silicon Nanoelectronics Workshop, ed. by B.-G. Park and H. Mizuta (Kyoto, Japan) 21-22, (2007).
Impact of Strain on the Ultimate Scaling of Double Gate MOSFETs using a Non-Equilibrium Green Functions Approach ,
A. Martinez, K. Kalna, A. Svizhenko, J. R. Barker and A. Asenov
Proceeding of the 15th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS 15) (Hongo Campus, University of Tokyo, Tokyo, Japan, 23-27 July, 2007), 128.(2007)
A study of the interface roughness effect in Si-nanowires using a full 3D NEGF approach
A. MARTINEZ, K. KALNA, J.R. BARKER AND A. ASENOV
Physica E : 37, 168-172, (2007)
On the Impact of High-k Gate Stacks on Mobility: A Monte Carlo Study Including Coupled SO Phonon-plasmon Scattering
G. FERRARI, J. R. WATLING, S. ROY, J. R. BARKER, P. ZEITZOFF, G. BERSUKER AND A. ASENOV
J. Comput. Electron: 6, 1-5 (2007).
Developing a full 3D NEGF simulator with random dopant and interface roughness
A. Martinez,J. R. BARKER, A.Asenov, Svizhenko and M.P. Anatram
J.Comput. Electron 6: 215-218 (2007).
Model plasma dispersion functions for SO phonon scattering in Monte Carlo simulations of high k dielectric MOSFETs
J. R. BARKER and J.R. Watling
J.Comput. Electron 5: 463-466 (2006).
(also published on line: 24th January 2007)
Monte Carlo study of mobility in Si devices with HfO2 based oxides
G. FERRARI, J. R. WATLING, S. ROY, J. R. BARKER, P. ZEITZOFF, G. BERSUKER AND A. ASENOV,
Materials Science in Semiconductor Processing, 9: 995-999, (2006).
Development of a full 3D NEGF nan-CMOS simulator
A. Martinez,J. R. BARKER, A.Asenov, M. Bescond, Svizhenko and A. Anatram
Proc.SISPAD 2006 (IEEE) 353-356 (2006).
Hamming hypermeshes: high performance interconnection networks for pin-out limited systems
F. RODRIGUEZ-SALAZAR and J. R. BARKER
Performance Evaluation, 63 , 759-775 (2006).
Monte Carlo study of coupled SO phonon-plasmon scattering in Si MOSFETs with high k- dielectric gate stacks: hot electron and disorder effects
BARKER, J. R., WATLING, J.R., BROWN, A., ROY, S., ZEITZOFF, P., BERSUKER, G., AND ASENOV, A
Springer Proceedings in Physics, 110 (August 15th ) (2006)
A 2D-NEGF quantum transport study of unintentional charges in a 5nm-DG transistor
MARTINEZ, A., BARKER, J.R., SVIZHENKO, A., ANANTRAM, M.P., AND ASENOV, A.,
Springer Proceedings in Physics, 110 (August 15th ) (2006)
Atomistic scattering close to an interface
BARKER, J.R., AND WATLING, J.R.,
Journal of Physics Conf series 38 204-207 (2006)
The impact of unintentional discrete charges in a nominally undoped channel of a thin body double gate MOSFET: classical to full quantum simulation,
MARTINEZ, A., BARKER , J.R., A. SVIZHENKO, A., ANANTRAM, M.P., BROWN, A.R., BIEGEL, B., AND ASENOV, A.
Journal of Physics Conf series 38 192-195 (2006)
SO phonon scattering rates at the Si-HfO2 interface in Si MOSFETs
BARKER, J.R., WATLING, J.R., AND FERRARI, G.,
Journal of Physics Conf series 38 184-187 (2006)
Green Function study of quantum transport In ultrasmall devices with embedded atomistic clusters
BARKER, J.R., MARTINEZ, A., SVIZHENKO, A., AANATRAM, M.P., AND ASENOV, A.,
J. Phys.: Conf. Ser. 35 233-246 (2006).
A NEGF study of the effect of surface roughness on CMOS nanotransistors
MARTINEZ, A., SVIZHENKO, A., AANATRAM, M.P., BARKER, J.R., AND ASENOV, A.,
J. Phys.: Conf. Ser. 35 269-274 (2006)
Non-equilibrium dielectric response of high-k gate stacks in Si MOSFETs: application to so interface phonon scattering
BARKER, J.R., AND WATLING, J.R.,
J. Phys.: Conf. Ser. 35 255-268 (2006)
A study of the effect of the interface roughness on a DG-MOSFET using a full 2D NEGF technique
A. MARTINEZ, A. SVIZHENKO, M.P. ANATRAM, J.R. BARKER, A.R. BROWN, A. ASENOV
The International Electronic Devices Meeting IEDM 2005, IEDM Technical Digest, San Francisco, December, 613-616 (2005).
Quantised Vortex Flows And Conductance Fluctuations In High Temperature Atomistic Silicon MOSFET Devices
J. R. BARKER
Physics of Semiconductor, ed J. Menedez and C.G. Van de Walle, AIP Press, 27 1493 (2005)
The impact of soft-optical phonon scattering due to high-k dielectrics on the performance of sub-100nm conventional and strained Si n-MOSFETs.
L. YANG, J. R. WATLING, J. R. BARKER AND A. ASENOV.
Physics of Semiconductors, ed J. Menedez and C.G. Van de Walle, AIP Press, 27 1497 (2005)
Predicting current flow; quantum transport from atom to transistor,
J.R. BARKER,
Chemistry World, 2, (2005)
Simulations of sub-100nm strained silicon MOSFETs with high-k gate stacks
L. YANG, J.R. WATLING, R. WILKINS, M.BORICI, J.R. BARKER, A.ASENOV AND S.ROY
J.Computational Electronics, 4, 171-175 (2005).
Hilbert graph: an expandable interconnection for clusters
F.RODRIGUEZ-SALAZAR AND J.R. BARKER
J.Computational Electronics, 4, 145-8 (2005)
Impact of high-k dielectric (HfO2) on the mobility and device performance of sub-100nm nMOSFETs
J.R. WATLING, L. YANG, A.ASENOV, J.R. BARKER AND S.ROY
IEEE Transactions on Device and Materials Reliability, 5, 103 (2005)
Scaling study of Si and strained Si n-MOSFETs with different high-k gate stacks
L. YANG, J. R. WATLING, F. ADAMU-LEMA, A. ASENOV AND J. R. BARKER
IEEE Technical Digest Int. Electron Devices Meeting IEDM, 597-600 (2004).
Vortex flows in semiconductor device quantum channels: time-dependent simulation
J.R. BARKER AND A. MARTINEZ
J. Computational Electronics, 3, 401-405, (2004)
Smart dust: Monte Carlo simulation of self-organised transport.
J.R. BARKER AND A. BARMPOUTIS
J. Computational Electronics,3, 317-321, (2004)
Si/SiGe Heterostructure Parameters for Device Simulations
L YANG, J R. WATLING, R C. W. WILKINS, M BORICI, J R. BARKER, ASEN ASENOV AND SCOTT ROY
Semiconductor Science and Technology 19,1174-1182, (2004)
Linear Feedback Shift Register Interconnection Networks
F. RODRIGUEZ-SALAZAR, J. R. BARKER
in Proceedings of the 2004 Workshop on Massively Parallel Processing, at IPDPS 2004 (2004).
Reduced interface roughness in sub-100nm strained Si n-MOSFETs - A Monte Carlo simulation study,
YANG, J. R. WATLING, R. C. W. WILKINS, J. R. BARKER AND A. ASENOV,
Proceedings of the 5th Europe Workshop on Ultimate Integration of Silicon (ULIS04), p23-26, IMEC, (2004).
The impact of interface roughness scattering and degeneracy in relaxed and strained Si n-channel MOSFETs
J. R. WATLING, L. YANG, M. BORICI, R. C. W. WILKINS, A. ASENOV, J. R. BARKER AND S. ROY. ,
Solid State Electronics 48, 1337-1346 (2004) (invited)
Impact of device geometry and doping strategy on linearity and RF performance in Si/SiGe MODFETs
L. YANG, A. ASENOV, J. R. WATLING, M. BORICI, J. R. BARKER, S. ROY, K .ELGAID, I. THAYNE AND T. HACKBARTH. ,
Microelectronics Reliability 44 1101-1107 (2004).
Quantum fluctuations in atomistic semiconductor devices
J. R. BARKER
Superlattices and Microstructures 34, 361-366 (2004).
Non-equilibrium quantum transport in finite device structures in the presence of non-self-averaged atomistic impurity scattering
J. R. BARKER
Semiconductor Science and Technology, 19S, p56-59, (2004).
Interface roughness scattering and its impact on electrons transport in relaxed and strained Si n-MOSFETs,
M. BORICI, J. R. WATLING, R. C. W. WILKINS, L. YANG, J. R. BARKER and A. ASENOV,
Semiconductor Science and Technology, 19S, p155-157, (2004).
A theoretical study of atomistic effects on the quantum hydrodynamics of carriers in decanano semiconductor devices using non-self-averaged Green functions
J.R. BARKER
Physica E19, 62-70 (2003)
Green Function Simulation Study of Non Self-Averaging Scattering Processes in Atomistic Semiconductor Devices
J.R. BARKER
Journal of Computational Electronics 2, 153-161 (2003)
Quantum hydrodynamics of normal vortices in open semiconductor quantum dots
J.R. BARKER
Physics of Semiconductors: Proceedings of the 26th International Conference on the Physics of Semiconductors, Edinburgh, 2002, Institute of Physics Conference Series 171, ed A R Long and J H Davies, Institute of Physics Publishing, Bristol (UK) and Philadelphia (USA), P231 (2003)
Bohm trajectories in quantum transport
J.R. BARKER
Chapter in "Progress in Nonequilibrium Green's Functions II", M. Bonitz and D. Semkat (eds.), World Scientific Publ., Singapore, 198-213 (2003)
Simulations of Scaled Sub-100 nm Strained Si/SiGe p-Channel MOSFETs
L. YANG, J.R. WATLING, M. BORICI, R.C.W. WILKINS, A. ASENOV, J.R. BARKER, S. ROY
Journal of Computational Electronics 2, 363-368 (2003)
Degeneracy and High Doping Effects in Deep Sub-Micron Relaxed and Strained Si n-MOSFETs
J.R. WATLING, L. YANG, M. BORICI, J.R. BARKER, A. ASENOV
Journal of Computational Electronics 2, 475-479 (2003)
A Non Perturbative Model of Surface Roughness Scattering for Monte Carlo Simulation of Relaxed Silicon n-MOSFETs
M. BORICI, J.R. WATLING, R. WILKINS, L. YANG, J.R. BARKER
Journal of Computational Electronics 2, 163-167 (2003)
Optimizations of sub-100nm Si/SiGe MODFETs for high linearity RF applications,
L. Yang, A. Asenov, M. Borici, J. R. Watling, J. R. Barker, A. Asenov, S. Roy, K .Elgaid, I. Thayne and T. Hackbarth.
Proceedings of the 2003 IEEE Conference on Electron Device and Solid-State Circuits (EDSSC03), p331-334, Hong Kong, 2003.
A simulation study of high linearity Si/SiGe HFETs,
L. Yang, A. Asenov, J. R. Watling, M. Borici, J. R. Barker, A. Asenov, S. Roy, K .Elgaid, I. Thayne and T. Hackbarth.
Proceedings of the 14th Workshop on Modelling and Simulation of Electron Device (MSED03), p41-44, Barcelona, 2003.
Traversal times and charge confinement for spatially dependent effective masses within semiconductor heterostructures: the quantum potential approach
J.R. BARKER AND J. R. WATLING
Microelectronic Engineering 63 97-103 (2002)
Normal vortex states and their application in mesoscopic semiconductor devices
J.R. BARKER
Microelectronic Engineering 63 223-231 (2002)
On the Completeness of Quantum Hydrodynamics: Vortex Formation and the Need for Both Vector and Scalar Quantum Potentials in Device Simulation
J.R. BARKER
Journal of Computational Electronics 1 17-21 (2002)
On the Current and Density Representation of Many-Body Quantum Transport Theory
J.R. BARKER
Journal of Computational Electronics 1 23-26 (2002)
Quantum Potential Corrections for Spatially Dependent Effective Masses with Application to Charge Confinement at Heterostructure Interfaces
J.R. WATLING, J.R. BARKER, S. ROY
Journal of Computational Electronics 1 279-282 (2002)
M.J. PREST, M.J.PALMER, T.J.GRASBY, P.J.PHILLIPS, O.A. MIRONOV, E.H.C. PARKER, T.E.WHALL, A.M. WAITE, A.G.R. EVANS, J.R. WATLING, A.ASENOV, J.R. BARKER
Materials Science and Engineering B, Solid State Materials for Advanced Technology, B89, 444-448 (2002)>
L. YANG, J.R. WATLING, R.C.W. WILKINS, A.ASENOV, J.R.BARKER, S.ROY AND T.HACKBARTH
Proc. 10th int Conf Electron Devices for Microwave and Optoelectronic Devices, EDMO(2002) Manchester, (2002)
Simulation of enhanced interface trapping due to carrier dynamics in warped valence bands in SiGe devices
J.R. BARKER & J R. WATLING
VLSI Design 13 453-458 (2001)
J R. WATLING, J.R. BARKER & A. ASENOV
Soft Sphere Model for electron correlation and scattering in the atomistic modelling of semiconductor devices
VLSI Design 13 441-446 (2001)
A simple model for the quantum hydrodynamic simulation of electron transport in quantum confined structures in the presence of vortices
J.R. BARKER
VLSI Design 13 237-244 (2001)
A fast algorithm for the study of wavepacket scattering at disordered interfaces
J.R. BARKER, J.R. WATLING & R. WILKINS
VLSI Design 13 199-204 (2001)
Non-equilibrium hole transport in deep sub micron well tempered Si p-MOSFETs
J.R. WATLING, Y.P ZHAO, A.ASENOV & J.R. BARKER,
VLSI Design 13 169-173 (2001)
Distribution of adsorbed molecules in electronic nose sensors
M. J. SWANN, A. GLIDLE, N.GADEGAARD, L. CUI, J. R. BARKER and J. M. COOPER,
Physica B 276-278, 357-358 (2000)
Indication of non-equilibrium transport in SiGe p-MOSFETs
Y. P ZHAO, S. KAYA, J.R. WATLING, J. R. BARKER M. PALMER,
G. BRAITHEWAITE, T.E. WHALL, E.H.C. PARKER, A. WWAITE, A.G.R. EVANS
Proc.ESSDERC 2000, ed W. A. Lane, et al, Frontier Group:ISBN 2-86332-248-6, 224-227 (2000).
Odour mapping using micro-resistor and piezo-electric sensor pairs
L.CUI, M.J. SWANN, A. GLIDLE, J. R. BARKER AND J. M. COOPER
Sensors and Actuators B66,94-97 (2000)
SHANG C., DALY C.J., McGRATH J.C. & BARLER J. R
In: Perspectives in Neural Computing. Eds. H. Malmgren, M. Borga and L. Niklasson. Springer Press.
(Proceedings of the International Conference on Artificial Neural Networks in Medicine and Biology, Goteborg, Sweden).
pp. 111-116, (2000).
SHANG C., DALY C.J., McGRATH J.C. & BARLER J. R
Proceedings of the IEEE International Conference on Image Processing. Vancouver, Canada. (in press 2000)
SHANG C., DALY C.J., McGRATH J.C. & BARLER J. R
J. IEE Electronics Letters. (2000)
Three dimensional modelling of dissipative quantum transport
in quantum dots and atomistic scale devices using non-hermitian generalised potentials
J. R. BARKER AND J. WATLING
Superlattices and Microstructures,27, 347-351 (2000)
On the use of Bohm trajectories for interpreting quantum flows in quantum dot structures
J. R. BARKER , D. K. FERRY, AND R. AKIS
Superlattices and microstructures, 27, 319-325 (2000)
RF Analysis Methodology for Si and Sige FETs Based on Transient Monte Carlo Simulation
S ROY, S KAYA, A ASENOV AND J R BARKER
IEICE Transactions in Electronics, vol. E83-C, pp.1224 (2000)
Development of a distributed crossbar switch hypermesh parallel computer,
J. BEELEY, J. R. BARKER and S. ROY,
IEE Research in Electronics and Photonics, ISBN 0863413218,
IEE Press: London, pp1-6 (2000).
Indication of Velocity Overshoot in strained Si0.8Ge0.2p-channel MOSFET's
S KAYA, Y-P ZHAO, J R WATLING, A ASENOV, J R BARKER,
G ANSARIPOUR, G BRAITHWAITE, E H C PARKER and T E WHALL.
Semiconductor Science & Technology, 15, pp.573 (2000).
Drift Diffusion and Hydrodynamic Simulations of Si/SiGe p-MOSFETs
Y P ZHAO, J R WATLING, S KAYA, A ASENOV AND J R BARKER
Material Science & Engineering B, 72, 114-117 (2000).
RF analysis methodology for Si and SiGe FETs based on Transient Monte Carlo Simulation
S.ROY, S. KAYA, A. ASENOV & J. R. BARKER
SISPAD '99, Proc. Conf on Simulation of semiconductor processes and devices,
IEEE Cat no. 99TH8387, 147-150 (1999)
On the design and control of quantum effects in mesoscopic devices
J.R. BARKER & A. ASENOV
Micoelectronic Engineering 47 (1999) 255-260.
A semi-empirical technique for simulating mesoscopic quantum transport in warped band structures
J.R. BARKER & J. WATLING
Micoelectronic Engineering 47 (1999) 369-371.
Issues in general quantum transport with complex potentials
D.K. FERRY and J. R. BARKER
Applied Physics Letters 74 582-4 (1999)
Complex Potentials, dissipative processes and general quantum transport
D. K. Ferry, J. R. Barker and R. Akis
Technical Proceedings 1999 International Conference on Modelling and
Simulation of Microsystems, Puerto Rico
In Chapter 11 Device Modelling, 373-376 (1999)
The determination of gaseous molecular density using a hybrid vapour system
M. J.SWANN, A. GLIDLE,L. CUI, J. R. BARKER AND J. M. COOPER
J. Chem. Commun. 2753-2754 (1998).
Trajectory-based representations of quantum transport theory and their connection with semi-classical physics
J. R. BARKER
Extended Abstracts, 1998 Sixth International Workshop on Computational Electronics (IWCE-6) IEEE Catalog No. 98EX116,1-4, (1998).
Efficient hole transport models in warped bands for use in the simulation of Si/SiGE MOSFETs
J. R. WATLING, A. ASENOV and J. R. BARKER
Extended Abstracts, 1998 Sixth International Workshop on Computational Electronics (IWCE-6) IEEE Catalog No. 98EX116, 96-99, (1998).
Strain engineered InxGal-xAs channel pHEMTs on virtual substrates: A simulation study
, S.BABIKER, A.ASENOV, S.ROY, J.R.BARKER & S.P.BEAUMONT
Extended Abstracts, 1998 Sixth International Workshop on Computational Electronics (IWCE-6) IEEE Catalog No. 98EX116, 178-181, (1998).
Monte-Carlo Investigation of Optimal Device Archetectures for SiGe FETs
S. ROY, S. KAYA, S. BABIKER, A. ASENOV & J.R.BARKER,
Extended Abstracts, 1998 Sixth International Workshop on Computational Electronics (IWCE-6) IEEE Catalog No. 98EX116, 210-213, (1998).
Electron logic devices and nano-instrumentation based on laterally patterned interaction-free quantum measurement structures
J. R. BARKER
Semiconductor Science and Technology, 13 A93-96 (1998)
On the validity of quantum hydrodynamic and quantum kinetic frameworks for describing anti-dot array devices.
J. R. BARKER AND D K FERRY
Semiconductor Science and Technology,13 A135-139 (1998).
Open problems in quantum simulation in ultra submicron devices
D K FERRY AND J R BARKER
VLSI Design, 8 165-172 (1998)
3D parallel finite element simulation of in cell breakdown in lateral channel IGBTs
A. ASENOV, J. R. BARKER, A. BROWN
VLSI Design, 8 99-104 (1998)
Complete RF analysis of compound FETs based on transient Monte Carlo simulations
A. ASENOV, S. BABIKER, J. R. BARKER, S. P. BEAUMONT
VLSI Design,VLSI Design, 8 313-318 (1998)
A. ASENOV, S. BABIKER, S. P. BEAUMONT AND J.R. BARKER,
Monte Carlo calibrated drift-diffusion simulation of short channel HFETs,
VLSI Design, Vol.8, Nos.(1-4), pp319-323, (1998).
S.ROY, A. ASENOV, S. BABIKER, J.R. BARKER, AND S. P. BEAUMONT,
RF performance of Si/SiGe MODFETs: A simulation study,
VLSI Design, Vol.8, Nos.(1-4), pp325-330, (1998).
S. BABIKER, A. ASENOV, J.R. BARKER AND S.P. BEAUMONT,
Quadrilateral finite elements Monte Carlo simulation of complex shape compound FETs,
VLSI Design, Vol.6, Nos.(1-4), 1998
A. ASENOV, J. R. BARKER, S. BABIKER, S. BEAUMONT
Complete Monte Carlo RF Analysis of 'Real' Short Channel Compound FETs
IEEE Trans. Electron. Dev. 45, 1644-1652 (1998)
J R BARKER
Aspects of tunnelling phenomena in non-equilibrium transport
Chapter 14, Hot Electrons in Semiconductors, ed N. Balkan,Clarendon Press: Oxford, 321-344 (1997).
S.ROY,A.ASENOV, S.BABIKER, J.R. BARKER, S.P. BEAUMONT
Monte Carlo analysis of Si/SiGe MODFET performance potential
Phys.Stat.Sol. (b) 204, 525 (1997).
S. ROY, A. ASENOV, J. R. BARKER, S. BABIKER, S. P. BEAUMONT
RF Performance of strained Si MODFETs and MOSFETs on virtual SiGe substrates: a Monte Carlo study
ESSDERC '97, Editions Fontieres, ed H. Grunbacher, 192-195, (1997)
D. K. FERRY, R. AKIS, D. VASILESKA, J. P. BIRD, J.R. BARKER
Modelling quantum transport in semiconductor nanostructures
Proc.2nd NASA Device Modelling Workshop, Ames Research Centre, NASA publication, 20-31 (1997).
A. ASENOV, A. BROWN, S. ROY, C. AROKIANATHAN, J.H. DAVIES, J.R. BARKER
Parallel 3D simulation of semiconductor devices
Proc.2nd NASA Device Modelling Workshop, Ames Research Centre, NASA publication, 86-99 (1997).
J R BARKER, S. ROY, S. BABIKER, A. ASENOV
Circuit and architecture issues for single electronic devices
Proceedings of the Int.Conf. on Quantum Devices and Circuits,World Scientific: Imperial College Press , 233-241 (1997)
L.A.AKERS, J.R. BARKER, L. McKENZIE
Architectures for nanostructured devices
Proceedings of the Int.Conf. on Quantum Devices and Circuits,World Scientific: Imperial College Press , 283-288 (1997)
WATHES, C., LANE, A., SWANN, M.J., GLIDLE, A, MOTTRAM, T., BARKER, J.R., & COOPER, J.M.
Measurement of Perineal Bovine Odour Changes at Oestrus using Artificial Olfaction
. Journal of Reproduction Fertility, Abstr. Ser. 18, 66 (1996).
WATHES, C., LANE, A., MOTTRAM, T., BARKER, J.R., & COOPER, J.M.
Bovine Perineal Odour Changes through the Estrus Cycle.
American Animal Science, Abstr. Ser. (1996).
BARKER, J.R., BABIKER, S AND ROY, S.
Single electron transport in nanostructure systems.
Physica B 227 87-91 , (1996)
BABIKER, S, ASENOV, A, BARKER, J.R, BEAUMONT, S.P
.Finite element Monte Carlo Simulation of Recess gate Compound FETs
Solid State Electronics, 39, 629-635 (1996).
ASENOV, A, J.R. BARKER, A.R. BROWN, G.L. LEE,
Scalable Parallel 3D Finite Element Nonlinear Poisson Solver,
J. Simulation Practice and Theor., (1996) 4 155-168.
BARKER J R,
Molecular electronic logic and architectures
in Introduction to Molecular Electronics edited by M Petty, D. Bloor and M. Bryce; Edward Arnold: London , Chapter 16, 345-376 (1995).
BARKER, J.R., and BABIKER, S .
Quantum Traffic Theory Of Single Electron Transport
In Nanostructures in Quantum transport in ultrasmall devices, ed D K Ferry, Plenum Press 217-226 (1995).
BARKER, J.R.
Trajectories In Quantum Transport,
in Quantum transport in ultrasmall devices, ed D K Ferry, Plenum Press 171-180 (1995).
BROWN, A.R., ASENOV, A., ROY, S AND BARKER J R,
Development of a parallel 3D finite element power semiconductor device.
IEE Digest, 1995/064, 2, 1-6 (1995)
BROWN A R, ASENOV A, ROY.S AND BARKER J.R.
Parallel 3D Finite Element Power Semiconductor Device Simulator based on topological rectangular grid.
in Simulation of Semiconductor Devices and Processes vol 6, ed H. Ryssel, P.Pichler, Springer-Verlag Wien, New York, 336-339 (1995)
BABIKER S, ASENOV A, BARKER J.R. AND BEAUMONT S P,
Finite Element Monte Carlo Simulation of Recess gate FETs
in Simulation of Semiconductor Devices and Processes vol 6, ed H. Ryssel, P.Pichler, Springer-Verlag Wien, New York, 226-229 (1995)
ASENOV, A., REID D, BARKER J R,
Speed-up of Scalable Iterative Linear Solvers Implemented on an array of transputers,
Parallel Computing, 20, 669 - 682 (1995).
BARKER, J R , BROUARD, S, GASPARIAN, V, IANNACCONE, G, JAUHO, J P, LEAVENS, C R, MUGA, J G, SALA, R, AND SOKOLOVSKY D.
Report on the first European Workshop on Tunnelling Times
Phantoms Newsletter 7 5-10 (1994)
BARKER, J.R.
On the pilot-field representation of quantum transport theory,
Semiconductor Sci.Tech. 9 911-917 (1994).
BARKER, J.R., A. ASENOV, A.R. BROWN, J. CLUCKIE, S. BABIKER and C.R. ATROKIANATHAN,
Parallel Simulation of Semiconductor Devices,
in Massively Parallel Processing, Applications and Development, Dds. L. Dekker, W. Smith, J.C. Zuidervaart, Elsevier, 683 - 690 (1994)
ASENOV, A, J.R. BARKER, A.R. BROWN and G.L. LEE,
Scalable parallel 3D finite element nonlinear Poisson solver,
in Massively Parallel Processing, Applications and Development, Dds. L. Dekker, W. Smith, J.C. Zuidervaart, Elsevier, 665 - 672 (1994)
CLUCKIE, J AND BARKER J.R. ,
"Two-body quantum transport theory of interacting electrons in laterally patterned semiconductor 2DEG structures"
Semiconductor Sci.Tech. 9 . 930-933 (1994)
COOPER,J.M. , SHEN, J.,YOUNG,F M.,CONNOLLY ,P, BARKER, J.R., AND MOORES, G.
The Imaging of Streptavidin and Avidin using Scanning Tunnelling Microscopy
J. Materials Science: Materials in Electronics 5 (1994)
ASENOV, A., D. REID and J. R. BARKER,
The Implementation and Speed-up of Coloured SOR Methods Solving 3D Problems on Array of Transputers,
in Transputer Applications and Systems, '93, Eds. R. Grebe, J. Hector, S. C. Hilton, M. R. Jane, P. H. Welch, 1, 578-587 (1993)
A. ASENOV, D. REID, J.R. BARKER, N. CAMERON, S.P. BEAUMONT
Application of Quadrilateral Finite Elements for Simulation of Recess T-Gate MESFETs and HEMTs
Proceedings of the 2nd International Workshop on Computational Electronics (IWCE-2), Leeds, UK, Leeds University, ed C. Snowden, 45 – 49, (1993).
S. BABIKER, J.R. BARKER, A. ASENOV
Queuing-Theoretic Simulation of Single Electronic Metal Semiconductor Devices and Systems
Proceedings of the 2nd International Workshop on Computational Electronics (IWCE-2), Leeds, UK, Leeds University, ed C. Snowden, 260 – 264, (1993).
J.R. BARKER
A Future with Computational Electronics: A New Golden Age?
Proceedings of the 2nd International Workshop on Computational Electronics (IWCE-2), Leeds, UK, Leeds University, ed C. Snowden, 101 – 108, (1993).
A.R. BROWN, A. ASENOV, J.R. BARKER
Numerical Simulation of IGBTs at Elevated Temperatures
Proceedings of the 2nd International Workshop on Computational Electronics (IWCE-2), Leeds, UK, Leeds University, ed C. Snowden, 50 – 54, (1993).
A.R. BROWN, D. REID, A. ASENOV, J.R. BARKER
The Implementation and Speed-up of Coloured SOR Methods for Solving the 3D Poisson Equation on an Array of Transputers
Proceedings of the 2nd International Workshop on Computational Electronics (IWCE-2), Leeds, UK, Leeds University, ed C. Snowden, 171 – 175, (1993).
J. CLUCKIE AND J.R. BARKER
Parallel Algorithms for the Simulation and Visualisation of Interacting Few-Electron Quantum Transport in Laterally Patterned Low-Dimensional Semiconductors
Proceedings of the 2nd International Workshop on Computational Electronics (IWCE-2), Leeds, UK, Leeds University, ed C. Snowden,270-274, (1993).
D. REID, A. ASENOV, J.R. BARKER, S.P. BEAUMONT
Parallel Simulation of Semiconductor Devices on MIMD Machines
Proceedings of the 2nd International Workshop on Computational Electronics (IWCE-2), Leeds, UK, Leeds University, ed C. Snowden, 161 – 165, (1993).
S. ROY, J.R. BARKER, A. ASENOV
System Simulation Tools for Single Electronic Devices
Proceedings of the 2nd International Workshop on Computational Electronics (IWCE-2), Leeds, UK, Leeds University, ed C. Snowden, 275 – 279, (1993).
BARKER, J.R., ROY, S., BABIKER, S.
Trajectory representations, fluctuations and stability of single electron devices',
Science and Technology of Mesoscopic Structures', Namba, S., Hamaguchi, C., Ando, T., eds., (London:Springer Verlag, Ch 22, 213-231 (1992)
BARKER, J.R.
Fundamental aspects of quantum transport theory,
in Handbook on Semiconductors, volume 1 Basic Properties of Semiconductors , Landsberg, P., ed., Second Completely Revised Edition, (:Elsevier-North Holland, Ch 19, 1079-1128( 1992)
BARKER,J R, CONNOLLY, P C AND MOORES, G
Interfacing to biological and molecular structures
in Physics of granular electonic systems, edited by D K Ferry, J R Barker, C Jacoboni, Plenum,425-440 (1991).
BARKER, J R
Building molecular electronic systems
Chemistry in Britain 27 728-731 (1991)
BARKER, J.R
Granular nanoelectronics
in Physics of granular electonic systems, edited by D K Ferry, J R Barker, C Jacoboni, Plenum 327-342(1991).
BARKER, J.R
Introduction to quantum transport in electron waveguides
in Physics of granular electronic systems, edited by D K Ferry, J R Barker, C Jacoboni, Plenum,19-41 (1991).
LAUGHTON,M.J, BARKER,J R NIXON J A AND DAVIESJ H
Modal analysis of transport through quantum point contacts using realistic potentials
Phys. Rev. B 44 1150-1153 (1991).