Research in quantum transport theory: J. R. Barker

Phenomena: vortex tubes in current flow through a nanowire

Application: nanowire devices: impurity and resulting potential field, electron density iso-surfaces

My research interests include:

Selected Publications

J.R. BARKER,

Quantum phase space distributions with compact support

Physica E 42, 491-496 (2010).

A. MARTINEZ, N. SEONE, A. R. BROWN, J. R. BARKER and A. ASENOV,

3-D Non-Equilibrium Green's Function Simulation of Non-Perturbative Scattering from Discrete Dopants in the Source and Drain of a Silicon Nanowire Transistor,

IEEE Transactions on Nanotechnology, vol. 8, no. 5, 603-610 (2009)

N. SEOANE, A. MARTINEZ, A.R. BROWN, J.R. BARKER, A. ASENOV

Current variability in Si nanowire MOSFETS due to random dopants in the source/drain regions: a fully 3-D NEGF Simulation study

IEEE Transactions on Electron Devices,vol. 56, No.7, pp. 1388-1395 (2009).

A. MARTINEZ, K.KALNA, P.V.SUSHKO, A.L. SCHLUGER, J.R. BARKER and A. ASENOV

Impact of Body Thickness Dependent Bandstructure on Scaling of Double Gate MOSFETs: a DFT/NEGF study

IEEE Transactions on Nanotechnology, vol. 8, 159-166 (2009).

A. MARTINEZ, M. BESCOND, A. R. BROWN, J. R. BARKER and A. ASENOV,

A full 3D non-equilibrium Green functions study of a stray charge in a nanowire MOS transistor,

Journal of Computational Electronics, Vol.7, No.3, pp.359-362 (2008)

A MARTINEZ, J R BARKER, M BESCOND, A R BROWN and A ASENOV

Performance variability in wrap-round gate silicon nano-transistors: a 3D self-consistent NEGF study of ballistic flows for atomistically-resolved source and drain

Journal of Physics: Conference Series 109 012026 (2008)

NEGF simulations of the effect of strain on scaled double gate nanoMOSFETs

Karol Kalna , Antonio Martinez, A. Svizhenko, M. P. Anantram, J. R. Barker and A. Asenov

J.Computational Electronics, published online 23 Feb (2008)

Impact of Strain on Scaling of DG nanoMOSFETs using the NEGF Approach,

A. MARTINEZ, K. KALNA, J. R. BARKER, A. ASENOV,

Physica Status Sol. 5, No. 1 47-51 (2008).

A self-consistent full 3-D real space NEGF simulator for studying nonperturbative effects in nano-Mosfets

A. MARTINEZ, M. BESCOND, J.R. BARKER, A. SVIZHENKO, M. P. ANATRAM,C. Millar and A. ASENOV

IEEE Transactions Electron Devices, 54, 2213-2222 (2007)

The impact of random dopant aggregation in source and drain on the performance of ballistic DG nano-MOSFETs : a NEGF study.

A. MARTINEZ, J. R. BARKER, A. SVIZHENKO, M. P. ANATRAM, and A. ASENOV

IEEE Transactions in Nanotechnology:6, 438-445 (2007)

A study of the interface roughness effect in Si-nanowires using a full 3D NEGF approach

A. MARTINEZ, K. KALNA, J.R. BARKER AND A. ASENOV

Physica E : 37, 168-172, (2007)

Developing a full 3D NEGF simulator with random dopant and interface roughness

A. Martinez,J. R. BARKER, A.Asenov, Svizhenko and M.P. Anatram

J.Comput. Electron 6: 215-218 (2007).

Development of a full 3D NEGF nan-CMOS simulator

A. Martinez,J. R. BARKER, A.Asenov, M. Bescond, Svizhenko and A. Anatram

Proc.SISPAD 2006 (IEEE) 353-356 (2006).

A 2D-NEGF quantum transport study of unintentional charges in a 5nm-DG transistor

MARTINEZ, A., BARKER, J.R., SVIZHENKO, A., ANANTRAM, M.P., AND ASENOV, A.,

Springer Proceedings in Physics, 110 (August 15th ) (2006)

Atomistic scattering close to an interface

BARKER, J.R., AND WATLING, J.R.,

Journal of Physics Conf series 38 204-207 (2006)

The impact of unintentional discrete charges in a nominally undoped channel of a thin body double gate MOSFET: classical to full quantum simulation,

MARTINEZ, A., BARKER , J.R., A. SVIZHENKO, A., ANANTRAM, M.P., BROWN, A.R., BIEGEL, B., AND ASENOV, A.

Journal of Physics Conf series 38 192-195 (2006)

Green Function study of quantum transport In ultrasmall devices with embedded atomistic clusters

BARKER, J.R., MARTINEZ, A., SVIZHENKO, A., AANATRAM, M.P., AND ASENOV, A.,

J. Phys.: Conf. Ser. 35 233-246 (2006).

A NEGF study of the effect of surface roughness on CMOS nanotransistors

MARTINEZ, A., SVIZHENKO, A., AANATRAM, M.P., BARKER, J.R., AND ASENOV, A.,

J. Phys.: Conf. Ser. 35 269-274 (2006)

A study of the effect of the interface roughness on a DG-MOSFET using a full 2D NEGF technique

A. MARTINEZ, A. SVIZHENKO, M.P. ANATRAM, J.R. BARKER, A.R. BROWN, A. ASENOV

The International Electronic Devices Meeting IEDM 2005, IEDM Technical Digest, San Francisco, December, 613-616 (2005).

Quantised Vortex Flows And Conductance Fluctuations In High Temperature Atomistic Silicon MOSFET Devices

J. R. BARKER

Physics of Semiconductor, ed J. Menedez and C.G. Van de Walle, AIP Press, 27 1493 (2005)

Vortex flows in semiconductor device quantum channels: time-dependent simulation

J.R. BARKER and A. MARTINEZ

J. Computational Electronics, 3, 401-405, (2004)

Non-equilibrium quantum transport in finite device structures in the presence of non-self-averaged atomistic impurity scattering

J. R. BARKER

Semiconductor Science and Technology, 19S, p56-59, (2004).

Quantum fluctuations in atomistic semiconductor devices

J. R. BARKER

Superlattices and Microstructures 34, 361-366 (2004).

Green Function Simulation Study of Non Self-Averaging Scattering Processes in Atomistic Semiconductor Devices

J.R. BARKER

Journal of Computational Electronics 2, 153-161 (2003)

Quantum hydrodynamics of normal vortices in open semiconductor quantum dots

J.R. BARKER

Physics of Semiconductors: Proceedings of the 26th International Conference on the Physics of Semiconductors, Edinburgh, 2002, Institute of Physics Conference Series 171, ed A R Long and J H Davies, Institute of Physics Publishing, Bristol (UK) and Philadelphia (USA), P231 (2003)

A theoretical study of atomistic effects on the quantum hydrodynamics of carriers in decanano semiconductor devices using non-self-averaged Green functions

J.R. BARKER

Physica E19, 62-70 (2003)

Bohm trajectories in quantum transport

J.R. BARKER

Chapter in "Progress in Nonequilibrium Green's Functions II", M. Bonitz and D. Semkat (eds.), World Scientific Publ., Singapore, 198-213 (2003)

Quantum hydrodynamics of normal vortices in open semiconductor quantum dots

J.R. BARKER

Physics of Semiconductors: Proceedings of the 26th International Conference on the Physics of Semiconductors, Edinburgh, 2002, Institute of Physics Conference Series 171, ed A R Long and J H Davies, Institute of Physics Publishing, Bristol (UK) and Philadelphia (USA), P231 (2003)

Traversal times and charge confinement for spatially dependent effective masses within semiconductor heterostructures: the quantum potential approach

J.R. BARKER AND J. R. WATLING

Microelectronic Engineering 63 97-103 (2002)

Normal vortex states and their application in mesoscopic semiconductor devices

J.R. BARKER

Microelectronic Engineering 63 223-231 (2002)

On the Completeness of Quantum Hydrodynamics: Vortex Formation and the Need for Both Vector and Scalar Quantum Potentials in Device Simulation

J.R. BARKER

Journal of Computational Electronics 1 17-21 (2002)

On the Current and Density Representation of Many-Body Quantum Transport Theory

J.R. BARKER

Journal of Computational Electronics 1 23-26 (2002)

Quantum Potential Corrections for Spatially Dependent Effective Masses with Application to Charge Confinement at Heterostructure Interfaces

J.R. WATLING, J.R. BARKER, S. ROY

Journal of Computational Electronics 1 279-282 (2002)

A simple model for the quantum hydrodynamic simulation of electron transport in quantum confined structures in the presence of vortices

J.R. BARKER

VLSI Design 13 237-244 (2001)

A fast algorithm for the study of wavepacket scattering at disordered interfaces

J.R. BARKER, J.R. WATLING & R. WILKINS

VLSI Design 13 199-204 (2001)

J. R. BARKER AND J. WATLING

Three dimensional modelling of dissipative quantum transport

in quantum dots and atomistic scale devices using non-hermitian generalised potentials

Superlattices and Microstructures,27, 347-351 (2000)

On the use of Bohm trajectories for interpreting quantum flows in quantum dot structures

Superlattices and microstructures, 27, 319-325 (2000)

On the design and control of quantum effects in mesoscopic devices

Micoelectronic Engineering 47 (1999) 255-260.

A semi-empirical technique for simulating mesoscopic quantum transport in warped band structures

Micoelectronic Engineering 47 (1999) 369-371.

Issues in general quantum transport with complex potentials

Applied Physics Letters 74 582-4 (1999)

Trajectory-based representations of quantum transport theory and their connection with semi-classical physics

Extended Abstracts, 1998 Sixth International Workshop on Computational Electronics (IWCE-6) IEEE Catalog No. 98EX116,1-4, (1998).

Efficient hole transport models in warped bands for use in the simulation of Si/SiGE MOSFETs

Extended Abstracts, 1998 Sixth International Workshop on Computational Electronics (IWCE-6) IEEE Catalog No. 98EX116, 96-99, (1998).

Electron logic devices and nano-instrumentation based on laterally patterned interaction-free quantum measurement structures

Semiconductor Science and Technology, 13 A93-96 (1998)

On the validity of quantum hydrodynamic and quantum kinetic frameworks for describing anti-dot array devices.

Semiconductor Science and Technology,13 A135-139 (1998).

Open problems in quantum simulation in ultra submicron devices

VLSI Design, 8 165-172 (1998)

Aspects of tunnelling phenomena in non-equilibrium transport

Chapter 14, Hot Electrons in Semiconductors, ed N. Balkan,Clarendon Press: Oxford, 321-344 (1997).

Modelling quantum transport in semiconductor nanostructures

Proc.2nd NASA Device Modelling Workshop, Ames Research Centre, NASA publication, 20-31 (1997).

Circuit and architecture issues for single electronic devices

Proceedings of the Int.Conf. on Quantum Devices and Circuits,World Scientific: Imperial College Press , 233-241 (1997)

Single electron transport in nanostructure systems.

Physica B 227 87-91 , (1996)

Quantum Traffic Theory Of Single Electron Transport

In Nanostructures in Quantum transport in ultrasmall devices, ed D K Ferry, Plenum Press 217-226 (1995).

Trajectories In Quantum Transport,

in Quantum transport in ultrasmall devices, ed D K Ferry, Plenum Press 171-180 (1995).

Report on the first European Workshop on Tunnelling Times

Phantoms Newsletter 7 5-10 (1994)

On the pilot-field representation of quantum transport theory,

Semiconductor Sci.Tech. 9 911-917 (1994).

Parallel Simulation of Semiconductor Devices,

in Massively Parallel Processing, Applications and Development, Dds. L. Dekker, W. Smith, J.C. Zuidervaart, Elsevier, 683 - 690 (1994)

"Two-body quantum transport theory of interacting electrons in laterally patterned semiconductor 2DEG structures"

Semiconductor Sci.Tech. 9 . 930-933 (1994)

Trajectory representations, fluctuations and stability of single electron devices',

Science and Technology of Mesoscopic Structures', Namba, S., Hamaguchi, C., Ando, T., eds., (London:Springer Verlag, Ch 22, 213-231 (1992)

Fundamental aspects of quantum transport theory,

in Handbook on Semiconductors, volume 1 Basic Properties of Semiconductors , Landsberg, P., ed., Second Completely Revised Edition, (:Elsevier-North Holland, Ch 19, 1079-1128( 1992)

Granular nanoelectronics

in Physics of granular electonic systems, edited by D K Ferry, J R Barker, C Jacoboni, Plenum 327-342(1991).

Introduction to quantum transport in electron waveguides

in Physics of granular electronic systems, edited by D K Ferry, J R Barker, C Jacoboni, Plenum,19-41 (1991).

"Modal analysis of transport through quantum point contacts using realistic potentials

Phys. Rev. B 44 1150-1153 (1991).

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