J R Barker, A. Asenov, S. Roy, J. Watling, M.Borici, S.Kaya
A. Martinez, K. Kalna
R. Wilkins,L. Yang, Y. P Zhao
Research Network for Theory and Modelling
Publications and Conference Papers
First UK Full Band Monte Carlo simulator
Bulk and 2D device codes
Unique RF simulation methodology
Calibration of commercial tools
Robust methodology for transport parameter extraction
Confirmed evidence for overshoot in Si0.8Ge0.2
Device Design of SiGe n and p-MOSFETs
Design studies for MOSFETs to the 0.1µm regime.
n-channel RF design optimisation
Modelling of surface roughness and degeneracy effects
First UK Non-equilibrium Green Function simulator
First detailed evaluation of interface scattering on performance in high k dielectricSi/SiGe MOSFET devicesL Yang, J R. Watling, R C. W. Wilkins, M Borici, J R. Barker, Asen Asenov and Scott Roy
Semiconductor Science and Technology 19,1174-1182, (2004)
Reduced interface roughness in sub-100nm strained Si n-MOSFETs - A Monte Carlo simulation study,
Yang, J. R. Watling, R. C. W. Wilkins, J. R. Barker and A. Asenov,
Proceedings of the 5th Europe Workshop on Ultimate Integration of Silicon (ULIS04), p23-26, IMEC, (2004).
The impact of interface roughness scattering and degeneracy in relaxed and strained Si n-channel MOSFETs
J. R. Watling, L. Yang, M. Borici, R. C. W. Wilkins, A. Asenov, J. R. Barker and S. Roy. ,
Solid State Electronics 48, 1337-1346 (2004) (invited)
Impact of device geometry and doping strategy on linearity and RF performance in Si/SiGe MODFETs
L. Yang, A. Asenov, J. R. Watling, M. Borici, J. R. Barker, S. Roy, K .Elgaid, I. Thayne and T. Hackbarth. ,
Microelectronics Reliability 44 1101-1107 (2004).
Reduced interface roughness in sub-100nm strained Si n-MOSFETs - A Monte Carlo simulation study,
YANG,L, J. R. WATLING, R. C. W. WILKINS, J. R. BARKER and A. ASENOV,
Proceedings of the 5th Europe Workshop on Ultimate Integration of Silicon (ULIS04), p23-26, IMEC, (2004).
Interface roughness scattering and its impact on electrons transport in relaxed and strained Si n-MOSFETs,
M. BORICI, J. R. WATLING, R. C. W. WILKINS, L. YANG, J. R. BARKER and A. ASENOV,
Semiconductor Science and Technology, 19S, p155-157, (2004).
Non-equilibrium quantum transport in finite device structures in the presence of non-self-averaged atomistic impurity scattering
J. R. BARKER
Semiconductor Science and Technology, 19S, p56-59, (2004).
Optimizations of sub-100nm Si/SiGe MODFETs for high linearity RF applications,
L. YANG, M. BORICI, J. R. WATLING, J. R. BARKER, A. ASENOV, S. ROY, K .ELGAID, I. THAYNE and T. HACKBARTH.
Proceedings of the 2003 IEEE Conference on Electron Device and Solid-State Circuits (EDSSC03), p331-334, Hong Kong, (2003).
A simulation study of high linearity Si/SiGe HFETs,
L. YANG, M. BORICI, J. R. WATLING, J. R. BARKER, A. ASENOV, S. ROY, K .ELGAID, I. THAYNE and T. HACKBARTH.
Proceedings of the 14th Workshop on Modelling and Simulation of Electron Device (MSED03), p41-44, Barcelona, (2003).
Green Function Simulation Study of Non Self-Averaging Scattering Processes in Atomistic Semiconductor Devices
J.R. BARKER
Journal of Computational Electronics 2, 153-161 (2003)
Simulations of Scaled Sub-100 nm Strained Si/SiGe p-Channel MOSFETs
L. YANG, J.R. WATLING, M. BORICI, R.C.W. WILKINS, A. ASENOV, J.R. BARKER, S. ROY
Journal of Computational Electronics 2, 363-368 (2003)
Degeneracy and High Doping Effects in Deep Sub-Micron Relaxed and Strained Si n-MOSFETs
J.R. WATLING, L. YANG, M. BORICI, J.R. BARKER, A. ASENOV
Journal of Computational Electronics 2, 475-479 (2003)
A Non Perturbative Model of Surface Roughness Scattering for Monte Carlo Simulation of Relaxed Silicon n-MOSFETs
M. BORICI, J.R. WATLING, R. WILKINS, L. YANG, J.R. BARKER
Journal of Computational Electronics 2, 163-167 (2003)
Traversal times and charge confinement for spatially dependent effective masses within semiconductor heterostructures: the quantum potential approach
J.R. BARKER AND J. R. WATLING
Microelectronic Engineering 63 97-103 (2002)
Quantum Potential Corrections for Spatially Dependent Effective Masses with Application to Charge Confinement at Heterostructure Interfaces
J.R. WATLING, J.R. BARKER, S. ROY
Journal of Computational Electronics 1 279-282 (2002)
M.J. PREST, M.J.PALMER, T.J.GRASBY, P.J.PHILLIPS, O.A. MIRONOV, E.H.C. PARKER, T.E.WHALL, A.M. WAITE, A.G.R. EVANS, J.R. WATLING, A.ASENOV, J.R. BARKER
Materials Science and Engineering B, Solid State Materials for Advanced Technology, B89, 444-448 (2002)>
L. YANG, J.R. WATLING, R.C.W. WILKINS, A.ASENOV, J.R.BARKER, S.ROY AND T.HACKBARTH
Proc. 10th int Conf Electron Devices for Microwave and Optoelectronic Devices, EDMO(2002) Manchester, (2002)
Simulation of enhanced interface trapping due to carrier dynamics in warped valence bands in SiGe devices
J.R. BARKER & J R. WATLING
VLSI Design 13 453-458 (2001)
Non-equilibrium hole transport in deep sub micron well tempered Si p-MOSFETs
J.R. WATLING, Y.P ZHAO, A.ASENOV & J.R. BARKER,
VLSI Design 13 169-173 (2001)
Indication of non-equilibrium transport in SiGe p-MOSFETs
Y. P ZHAO, S. KAYA, J.R. WATLING, J. R. BARKER M. PALMER,
G. BRAITHEWAITE, T.E. WHALL, E.H.C. PARKER, A. WWAITE, A.G.R. EVANS
Proc.ESSDERC 2000, ed W. A. Lane, et al, Frontier Group:ISBN 2-86332-248-6, 224-227 (2000).
S ROY, S KAYA, A ASENOV AND J R BARKER
RF Analysis Methodology for Si and Sige FETs Based on Transient Monte Carlo Simulation
IEICE Transactions in Electronics, vol. E83-C, pp.1224 (2000)
S KAYA, Y-P ZHAO, J R WATLING, A ASENOV, J R BARKER,
G ANSARIPOUR, G BRAITHWAITE, E H C PARKER and T E WHALL.
Indication of Velocity Overshoot in strained Si0.8Ge0.2p-channel MOSFET's
Semiconductor Science & Technology, 15, pp.573 (2000).
Y P ZHAO, J R WATLING, S KAYA, A ASENOV AND J R BARKER
Drift Diffusion and Hydrodynamic Simulations of Si/SiGe p-MOSFETs
Material Science & Engineering B, 72, 114-117 (2000).
S.ROY, S. KAYA, A. ASENOV & J. R. BARKER
RF analysis methodology for Si and SiGe FETs based on Transient Monte Carlo Simulation
SISPAD '99, Proc. Conf on Simulation of semiconductor processes and devices,
IEEE Cat no. 99TH8387, 147-150 (1999)
J.R. BARKER & J. WATLING
A semi-empirical technique for simulating mesoscopic quantum transport in warped band structures
Micoelectronic Engineering 47 (1999) 369-371.
Efficient hole transport models in warped bands for use in the simulation of Si/SiGE MOSFETs
Extended Abstracts, 1998 Sixth International Workshop on Computational Electronics (IWCE-6) IEEE Catalog No. 98EX116, 96-99, (1998).
S.BABIKER, A.ASENOV, S.ROY, J.R.BARKER & S.P.BEAUMONT
Strain engineered InxGal-xAs channel pHEMTs on virtual substrates: A simulation study
, Extended Abstracts, 1998 Sixth International Workshop on Computational Electronics (IWCE-6) IEEE Catalog No. 98EX116, 178-181, (1998).
S. ROY, S. KAYA, S. BABIKER, A. ASENOV & J.R.BARKER,
Monte-Carlo Investigation of Optimal Device Archetectures for SiGe FETs
Extended Abstracts, 1998 Sixth International Workshop on Computational Electronics (IWCE-6) IEEE Catalog No. 98EX116, 210-213, (1998).
S.ROY, A. ASENOV, S. BABIKER, J.R. BARKER, AND S. P. BEAUMONT,
RF performance of Si/SiGe MODFETs: A simulation study,
VLSI Design, Vol.8, Nos.(1-4), pp325-330, (1998).
S.ROY,A.ASENOV, S.BABIKER, J.R. BARKER, S.P. BEAUMONT
Monte Carlo analysis of Si/SiGe MODFET performance potential
Phys.Stat.Sol. (b) 204, 525 (1997).
S. ROY, A. ASENOV, J. R. BARKER, S. BABIKER, S. P. BEAUMONT
RF Performance of strained Si MODFETs and MOSFETs on virtual SiGe substrates: a Monte Carlo study
ESSDERC '97, Editions Fontieres, ed H. Grunbacher, 192-195, (1997)
A. ASENOV, A. BROWN, S. ROY, C. AROKIANATHAN, J.H. DAVIES, J.R. BARKER
Parallel 3D simulation of semiconductor devices
Proc.2nd NASA Device Modelling Workshop, Ames Research Centre, NASA publication, 86-99 (1997).
