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RESEARCH
Device Modelling
Currently his research work involves p-MOSFETs design using alternative material- Germanium (Ge). Ge shows promising high mobility for charge carriers.
Calibrations are being performed on the TCAD Sentaurus tools and Monte Carlo Simulator using latest available data (orientations, strain, saturation velocity, fitting parameters) in the journal papers (analytical, numerical and experimental). Doping levels are currently scaled accordingly for drift diffusion performance of hole carriers of 20nm device - Implant-Free Quantum Well (IF-QW).
At the meantime, scattering mechanisms of the hole carrier transport are being studied using Monte Carlo Simulation.
The results will be compared with some of the most recent experimental data.
Investigation tools: Commercial package - TCAD Sentaurus, In-house Monte Carlo Codes.
Softwares used: OpenDx, xmgrace, Linux 64-bit, Fortran 90, xyExtract, gnuplot.
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Funding
Engineering and Physical Sciences Research Council (EPSRC), UK
Collaborators include: IMEC (Be), University of Warwick (UK), University of Sheffield (UK)
Publication, Presentation, Poster
1. Monte Carlo Simulation Study of the Impact of Strain and Substrate Orientation on Hole Mobility in Germanium
Craig Riddet, Jeremy R.Watling, Kah H.Chan and Asen Asenov
poster presentation, TMCSII, St.William's College, York(UK) Jan 2010
2. Simulation and Optimization of Implant-Free Quantum Well Germanium p-MOSFET Design
Kah H.Chan, Craig Riddet, Brahim Benbakhti, Jeremy Watling, Asen Asenov
Accepted for conference presentation; to be submitted to the symposium H : Post-Si CMOS electronic devices: the role of Ge and III-V materials of the E-MRS 2010 Spring Meeting, Congress Center, Strasbourg(France), June 2010
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